sot23 npn silicon planar avalanche transistor issue 4 - october 1995 j features * specifically designed for avalanche mode operation * 60a peak avalanche current (pulse width=20ns) applications * laser led drivers * fast edge generation * high speed pulse generators partmarking detail ? FMMT415 ? 415 fmmt417 ? 417 absolute maximum ratings. parameter symbol FMMT415 fmmt417 unit collector-base voltage v cbo 260 320 v collector-emitter voltage v ceo 100 100 v emitter-base voltage v ebo 6v continuous collector current i c 500 ma peak collector current (pulse width=20ns) i cm 60 a power dissipation p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage FMMT415 v (br)ces 260 v i c =1ma t amb = -55 to +150c fmmt417 320 v i c =1ma collector-emitter breakdown voltage v ceo(sus) 100 v i c =100 m a emitter-base breakdown voltage v (br)ebo 6v i e =10 m a collector cut-off current i cbo 0.1 10 m a m a v cb =180v v cb =180v, t amb =100c emitter cut-off current i ebo 0.1 m a v eb =4v collector-emitter saturation voltage v ce(sat) 0.5 v i c =10ma, i b =1ma* base-emitter saturation voltage v be(sat) 0.9 v i c =10ma, i b =1ma* current in second breakdown (pulsed) i sb 15 25 a a v c =200v, c ce =620pf v c =250v, c ce =620pf static forward current transfer ratio h fe 25 i c =10ma, v ce =10v* transition frequency f t 40 mhz i c =10ma, v ce =20v f=20mhz collector-base capacitance c cb 8pfv cb =20v, i e =0 f=100mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% FMMT415 fmmt417 FMMT415 fmmt417 drive current = 5ma/ns typical characteristics maximum avalanche current v pulse width i - ( a ) h fe v i c minimum starting voltage as a function of capacitance v - ( v ) h i usb v temperature for the specified conditions minimum starting voltage as a function of drive current 040 20 80 100 120 140 160 180 60 0 20 40 60 80 100 120 140 160 180 1. 2. 3. pulse width (ns) 1. >4x10 operations wit hout failure 2. 10 operations to failure 3. 10 operations to failure -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0 10 20 30 40 temperature (c) v c = 250v i - ( a ) v c = 200v 100 m a 1ma 10ma 100ma 1a 0 20 40 60 80 100 collector current 175c 25c -55c 100p 1n 10n 100n 100 120 140 160 180 200 220 risetime of base collector-emitter capacitance (f) i b =50ma i b =100ma i b =200ma 11 0 145 150 155 160 165 170 175 180 risetime of base drive (ma/ns) v - (v) i b =60ma i b =100ma i b =200ma c=620pf -60 -40 -20 0 20 40 60 80 100 120 140 160 180 temperature (c) 100 120 140 150 160 c = 620pf minimum starting voltage as a function of temperature v - (v) v ce =10v 11 7 3 c b e sot23 3 - 104 3 - 105
sot23 npn silicon planar avalanche transistor issue 4 - october 1995 j features * specifically designed for avalanche mode operation * 60a peak avalanche current (pulse width=20ns) applications * laser led drivers * fast edge generation * high speed pulse generators partmarking detail ? FMMT415 ? 415 fmmt417 ? 417 absolute maximum ratings. parameter symbol FMMT415 fmmt417 unit collector-base voltage v cbo 260 320 v collector-emitter voltage v ceo 100 100 v emitter-base voltage v ebo 6v continuous collector current i c 500 ma peak collector current (pulse width=20ns) i cm 60 a power dissipation p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage FMMT415 v (br)ces 260 v i c =1ma t amb = -55 to +150c fmmt417 320 v i c =1ma collector-emitter breakdown voltage v ceo(sus) 100 v i c =100 m a emitter-base breakdown voltage v (br)ebo 6v i e =10 m a collector cut-off current i cbo 0.1 10 m a m a v cb =180v v cb =180v, t amb =100c emitter cut-off current i ebo 0.1 m a v eb =4v collector-emitter saturation voltage v ce(sat) 0.5 v i c =10ma, i b =1ma* base-emitter saturation voltage v be(sat) 0.9 v i c =10ma, i b =1ma* current in second breakdown (pulsed) i sb 15 25 a a v c =200v, c ce =620pf v c =250v, c ce =620pf static forward current transfer ratio h fe 25 i c =10ma, v ce =10v* transition frequency f t 40 mhz i c =10ma, v ce =20v f=20mhz collector-base capacitance c cb 8pfv cb =20v, i e =0 f=100mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% FMMT415 fmmt417 FMMT415 fmmt417 drive current = 5ma/ns typical characteristics maximum avalanche current v pulse width i - ( a ) h fe v i c minimum starting voltage as a function of capacitance v - ( v ) h i usb v temperature for the specified conditions minimum starting voltage as a function of drive current 040 20 80 100 120 140 160 180 60 0 20 40 60 80 100 120 140 160 180 1. 2. 3. pulse width (ns) 1. >4x10 operations wit hout failure 2. 10 operations to failure 3. 10 operations to failure -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0 10 20 30 40 temperature (c) v c = 250v i - ( a ) v c = 200v 100 m a 1ma 10ma 100ma 1a 0 20 40 60 80 100 collector current 175c 25c -55c 100p 1n 10n 100n 100 120 140 160 180 200 220 risetime of base collector-emitter capacitance (f) i b =50ma i b =100ma i b =200ma 11 0 145 150 155 160 165 170 175 180 risetime of base drive (ma/ns) v - (v) i b =60ma i b =100ma i b =200ma c=620pf -60 -40 -20 0 20 40 60 80 100 120 140 160 180 temperature (c) 100 120 140 150 160 c = 620pf minimum starting voltage as a function of temperature v - (v) v ce =10v 11 7 3 c b e sot23 3 - 104 3 - 105
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